| PART |
Description |
Maker |
| 2SC2371 |
NPN Silicon Power Transistors 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Micro Commercial Components, Corp.
|
| FMMT38A FMMT38B FMMT38C FMMT38CTA |
SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
300 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Fairchild Semiconductor
|
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| MJE5740G MJE574006 MJE5742G MJE5742 MJE5740 |
NPN Silicon Power Darlington Transistors 8 AMPERES 300?400 VOLTS 80 WATTS
NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
ONSEMI[ON Semiconductor]
|
| 1DI300ZN-120 |
power transistor module
Low-Power, 1% Accurate, Dual-/Triple-/Quad-Level Battery Monitors in Small TDFN and TQFN Packages
300 A, 1200 V, NPN, Si, POWER TRANSISTOR
|
Fuji Electric
List of Unclassifed Manufacturers
ETC
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 2SC3503 2SC3503CSTU 2SC3503DSTU 2SC3503ESTU 2SC350 |
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BSS73DCSM BSS73DCSM-JQR-A BSS73DCSM-JQR-AG4 |
Dual Bipolar NPN Devices in a hermetically sealed
500 mA, 300 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB
|
Seme LAB
SEMELAB LTD
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| KTC812T-B KTC812T-15 |
300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC(Korea Electronics)
|
| DN030 |
300 mA, NPN silicon transistor
|
AUK corp
|
|
